节点文献

Broadband Light Emission from Chirped Multiple InAs Quantum Dot Structure

推荐 CAJ下载
PDF下载
不支持迅雷等下载工具，请取消加速工具后下载。

【Author】 LV Xue-Qin;JIN Peng;CHEN Hong-Mei;WU Yan-Hua;WANG Fei-Fei;WANG Zhan-Guo;Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences;Pen-Tung Sah Institute of Micro-Nano Science and Technology,Xiamen University;

【机构】 Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences； Pen-Tung Sah Institute of Micro-Nano Science and Technology,Xiamen University；

【摘要】 Broadband light emission is obtained from a chirped multiple InAs/InGaAs/GaAs quantum dot(QD) structure.The thickness of the InGaAs strain-reducing layer(SRL) is used as the tuning parameter to adjust the light emission property of each QD layer in the chirped structure.It is shown from the photoluminescence(PL)measurement that the SRL thickness has a strong influence on the PL peak position,linewidth,and intensity.By constructing the chirped QD structure comprising five groups of QD layers with different SRL thicknesses,a broadband electroluminescence emission with the full width at half maximum of 202 nm is realized,indicating the feasibility of chirped multiple InAs QD layers on broadening the emission spectrum.更多还原

【Abstract】 Broadband light emission is obtained from a chirped multiple InAs/InGaAs/GaAs quantum dot(QD) structure.The thickness of the InGaAs strain-reducing layer(SRL) is used as the tuning parameter to adjust the light emission property of each QD layer in the chirped structure.It is shown from the photoluminescence(PL)measurement that the SRL thickness has a strong influence on the PL peak position,linewidth,and intensity.By constructing the chirped QD structure comprising five groups of QD layers with different SRL thicknesses,a broadband electroluminescence emission with the full width at half maximum of 202 nm is realized,indicating the feasibility of chirped multiple InAs QD layers on broadening the emission spectrum.更多还原

【基金】 Supported by the National Natural Science Foundation of China under Grant Nos 61274072,60976057 and 60876086;the Open Fund of Key Laboratory of Semiconductor Materials Science of Institute of Semiconductors,Chinese Academy of Sciences(No KLSMS-1105)

【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2013年11期

【分类号】O471.1

知网节下载

节点文献中：

本文链接的文献网络图示:

本文的引文网络

节点文献