Characterization of HfSiAlON/MoAlN PMOSFETs Fabricated by Using a Novel Gate-Last Process

【摘要】 We fabricate p-channel metal-oxide-semiconductor-field-effect-transistors（PMOSFETs） with a HfSiAlON/MoAlN gate stack using a novel and practical gate-last process.In the process,SiO₂/poly-Si is adopted as the dummy gate stack and replaced by an HfSiAlON/MoAlN gate stack after source/drain formation.Because of the high-k/metalgate stack formation after the 1000°C source/drain ion-implant doping activation,the fabricated PMOSFET has good electrical characteristics.The device’s saturation driving current is 2.71 x 10⁴ A/μm(V_GS = V_DS =-1.5 V)and the off-state current is 2.78 x 10⁹ A/μm.The subthreshold slope of 105mV/dec(Y_DS = —1-5 V),drain induced barrier lowering of 80mV/V and V_th of —0.3 V are obtained.The research indicates that the present PMOSFET could be a solution for high performance PMOSFET applications.更多还原

【Abstract】 We fabricate p-channel metal-oxide-semiconductor-field-effect-transistors（PMOSFETs） with a HfSiAlON/MoAlN gate stack using a novel and practical gate-last process.In the process,SiO₂/poly-Si is adopted as the dummy gate stack and replaced by an HfSiAlON/MoAlN gate stack after source/drain formation.Because of the high-k/metalgate stack formation after the 1000°C source/drain ion-implant doping activation,the fabricated PMOSFET has good electrical characteristics.The device’s saturation driving current is 2.71 x 10⁴ A/μm(V_GS = V_DS =-1.5 V)and the off-state current is 2.78 x 10⁹ A/μm.The subthreshold slope of 105mV/dec(Y_DS = —1-5 V),drain induced barrier lowering of 80mV/V and V_th of —0.3 V are obtained.The research indicates that the present PMOSFET could be a solution for high performance PMOSFET applications.更多还原