The Effect of Multiple Interface States and nc-Si Dots in a Nc-Si Floating Gate MOS Structure Measured by their G-V Characteristics

【摘要】 An nc-Si floating gate MOS structure is fabricated by thermal annealing of SiN_x/a-Si/SiO₂.There are nc-Si dots isolated by a-Si due to partial crystallization.Conductance-voltage（G-V）measurements are performed to investigate the effect of multiple interface states including Si-sub/SiO₂,a-Si related（as-deposited sample）and nc-Si（annealed sample）in a charge trapping/releasing process.Double conductance peaks located in the depletion and weak inversion regions are found in our study.For the as-deposited sample,the Si-sub/SiO₂ related G-V peak with weak intensity shifts to the negative as test frequency increases.The a-Si related G-V peak with strong intensity shifts slightly with the increasing frequency.For the annealed sample,little change appears in the intensity and shift of Si-sub/SiO₂ related G-V peaks.The position of a-Si/nc-Si related peak is independent of frequency,and its intensity is weaker compared to that of the as-deposited sample.It is also found that as the size of nc-Si becomes larger,the a-Si/nc-Si related peak shifts to the depletion region due to the size effect of nc-Si.更多还原

【Abstract】 An nc-Si floating gate MOS structure is fabricated by thermal annealing of SiN_x/a-Si/SiO₂.There are nc-Si dots isolated by a-Si due to partial crystallization.Conductance-voltage（G-V） measurements are performed to investigate the effect of multiple interface states including Si-sub/SiO₂,a-Si related（as-deposited sample）and nc-Si（annealed sample） in a charge trapping/releasing process.Double conductance peaks located in the depletion and weak inversion regions are found in our study.For the as-deposited sample,the Si-sub/SiO₂ related G-V peak with weak intensity shifts to the negative as test frequency increases.The a-Si related G-V peak with strong intensity shifts slightly with the increasing frequency.For the annealed sample,little change appears in the intensity and shift of Si-sub/Si02 related G-V peaks.The position of a-Si/nc-Si related peak is independent of frequency,and its intensity is weaker compared to that of the as-deposited sample.It is also found that as the size of nc-Si becomes larger,the a-Si/nc-Si related peak shifts to the depletion region due to the size effect of nc-Si.更多还原