节点文献

The Growth and Fabrication of InGaN/GaN Multi-Quantum Well Solar Cells on Si(111) Substrates

推荐 CAJ下载
PDF下载
不支持迅雷等下载工具，请取消加速工具后下载。

【Author】 LI Zhi-Dong;XIAO Hong-Ling;WANG Xiao-Liang;WANG Cui-Mei;DENG Qing-Wen;JING Liang;DING Jie-Qin;WANG Zhan-Guo;HOU Xun;Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices;ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics;Xi’an Jiaotong University;

【机构】 Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences； Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices； ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics； Xi’an Jiaotong University；

【摘要】 Metalorganic chemical vapor deposition of a crack-free mirror-like surface of InGaN/GaN MQWs on Si（111）substrate is demonstrated,and an InGaN/GaN MQWs solar cell device is fabricated.Photo response measurement of the solar cell devices shows that the fill factor FF=49.4%,open circuit voltage V_oc = 0.32 V,and short circuit current J_sc = 0.07 mA/cm²,under AM 1.5 G illumination.In order to analyze the influence of material quality on the performance of solar cells,XRD,SEM and Raman scattering experiments are carried out.It is found that insertion of a proper top AIN layer can effectively improve the material quality,and therefore enhance the photovoltaic performance of the fabricated device.更多还原

【Abstract】 Metalorganic chemical vapor deposition of a crack-free mirror-like surface of InGaN/GaN MQWs on Si（111）substrate is demonstrated,and an InGaN/GaN MQWs solar cell device is fabricated.Photo response measurement of the solar cell devices shows that the fill factor FF=49.4%,open circuit voltage V_oc = 0.32 V,and short circuit current J_sc = 0.07 mA/cm²,under AM 1.5 G illumination.In order to analyze the influence of material quality on the performance of solar cells,XRD,SEM and Raman scattering experiments are carried out.It is found that insertion of a proper top AIN layer can effectively improve the material quality,and therefore enhance the photovoltaic performance of the fabricated device.更多还原

【基金】 Supported by the National Natural Sciences Foundation of China under Grant Nos 61076052 and 60906006;the State Key Development Program for Basic Research of China under Grant No 2012CB619303;the National High Technology Research;Development Program under Grant No 2011AA050514

【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2013年06期

【分类号】TM914.4

知网节下载

节点文献中：

本文链接的文献网络图示:

本文的引文网络

节点文献