The Rectifying Property and Photovoltaic Effect in the La_0.8Ag_0.2MnO₃/SrTiO₃-Nb Hetero junction

【摘要】 A p-n junction composed of Ag⁺-doped manganite La_0.8Ag_0.2MnO₃（LAMO） and Nb-0.5wt%-doped SrTiO₃（STON）was fabricated using the pulsed laser deposition method.The heterojunction exhibits a good rectifying property over a wide temperature range from 20 to 390 K.The minimum diffusion potential and the lowest leakage currents under different negative voltages both occur at 320 K,which is around the metallic-insulator transition temperature of the LAMO film.The photovoltage rises with the decreasing temperature and wavelength of the laser beam.Under the illumination of a 473 nm laser beam,the photovoltage grows as the light power increases and seems to be saturated at about 300mW.The maximum V_oc is 0.76V,which is close to the diffusion voltage.更多还原

【Abstract】 A p-n junction composed of Ag⁺-doped manganite La_0.8Ag_0.2MnO₃（LAMO） and Nb-0.5wt%-doped SrTiO₃（STON）was fabricated using the pulsed laser deposition method.The heterojunction exhibits a good rectifying property over a wide temperature range from 20 to 390 K.The minimum diffusion potential and the lowest leakage currents under different negative voltages both occur at 320 K,which is around the metallic-insulator transition temperature of the LAMO film.The photovoltage rises with the decreasing temperature and wavelength of the laser beam.Under the illumination of a 473 nm laser beam,the photovoltage grows as the light power increases and seems to be saturated at about 300mW.The maximum V_oc is 0.76V,which is close to the diffusion voltage.更多还原