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The Origin of BC7 Sheet Metallicity and the Tuning of its Electronic Properties by Hydrogenation

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【作者】 雷雪玲刘刚吴木生徐波欧阳楚英潘必才

【Author】 LEI Xue-Ling;LIU Gang;WU Mu-Sheng;XU Bo;OUYANG Chu-Ying;PAN Bi-Cai;Department of Physics,Jiangxi Normal University;Department of Physics and Hefei National Laboratory of Physical Sciences at the Microscale,University of Science and Technology of China;

【机构】 Department of Physics,Jiangxi Normal UniversityDepartment of Physics and Hefei National Laboratory of Physical Sciences at the Microscale,University of Science and Technology of China

【摘要】 Using first-principles calculations,we investigate the structural,electronic and hydrogenated properties of the hexagonal BCr sheet.The computed energy bands and density of states indicate that the BCr sheet is a metal,and its metallicity mainly originates from the non-bonding p_z electrons of the diagonal carbon of the B atom.When these carbon atoms are fully passivated by H atoms,the BCr sheet becomes a semiconductor with a band gap of 2.41 eV.Our studies demonstrate that changing both the proportion of the boron atoms in the boron carbon sheet and its hydrogenation can tune the electronic properties of boron carbon two-dimensional material.

【Abstract】 Using first-principles calculations,we investigate the structural,electronic and hydrogenated properties of the hexagonal BCr sheet.The computed energy bands and density of states indicate that the BCr sheet is a metal,and its metallicity mainly originates from the non-bonding p_z electrons of the diagonal carbon of the B atom.When these carbon atoms are fully passivated by H atoms,the BCr sheet becomes a semiconductor with a band gap of 2.41 eV.Our studies demonstrate that changing both the proportion of the boron atoms in the boron carbon sheet and its hydrogenation can tune the electronic properties of boron carbon two-dimensional material.

【基金】 Supported by the National Natural Science Foundation of China under Grant Nos 10964012,10904054,11064004,11264014 and11234013;the Natural Science Foundation of Jiangxi under Grant Nos 2009GQW008 and 2010GZW0028;the Cultivating Youths of Outstanding Ability in Jiangxi Normal University;the’Gan-po talent 555’Project of Jiangxi Province;the Oversea Returned Project from the Ministry of Education
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2013年06期
  • 【分类号】O469
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