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The Effect of the Oxygen Plasma Treatment for ITO and ZnO Nanorods on the Electroluminescence of ZnO Nanorod/MEH-PPV Heterostructure Devices

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【作者】 赵谡玲王永生高松杨一帆徐征

【Author】 ZHAO Su-Ling;WANG Yong-Sheng;GAO Song;YANG Yi-Fan;XU Zheng;Institute of Optoelectronic Technology,and Key Laboratory of Luminescence and Optical Information(Ministry of Education),Beijing Jiaotong University;

【机构】 Institute of Optoelectronic Technology,and Key Laboratory of Luminescence and Optical Information(Ministry of Education),Beijing Jiaotong University

【摘要】 Series devices of ITO/ZnO/ZnO nanorods/MEH-PPV/Al have been fabricated.ITO and ZnO nanorods of some devices are treated by O2 plasma.The electroluminescence of different devices is detected under different biases.UV electroluminescence of ZnO nanorods at 380 nm is observed in all the devices.The intensity of 380 nm increases when both ITO and ZnO nanorods are treated.The turn-on voltage of the treated device is lower than that of the non-treated device,and the EL power is enhanced.When the thickness of MEH-PPV is sufficiently thin,only 380 nm electroluminescence,besides a weak defect emission at 760 nm,is detected.The enhancement mechanism of the electroluminescence of the treated devices is discussed.

【Abstract】 Series devices of ITO/ZnO/ZnO nanorods/MEH-PPV/Al have been fabricated.ITO and ZnO nanorods of some devices are treated by O2 plasma.The electroluminescence of different devices is detected under different biases.UV electroluminescence of ZnO nanorods at 380 nm is observed in all the devices.The intensity of 380 nm increases when both ITO and ZnO nanorods are treated.The turn-on voltage of the treated device is lower than that of the non-treated device,and the EL power is enhanced.When the thickness of MEH-PPV is sufficiently thin,only 380 nm electroluminescence,besides a weak defect emission at 760 nm,is detected.The enhancement mechanism of the electroluminescence of the treated devices is discussed.

【基金】 Supported by the National Natural Science Foundation of China(109740139 and 51272022);the New Century Excellent Talentsin University(NCET-10-0220);the Fundamental Research Funds for the Central Universities(2012JBZ001);the National Basic Research Program of China(2010CB327705)
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2013年03期
  • 【分类号】O53;O482.31
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