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The Theoretical Electrical Characteristics of Organic Thin Film Transistors Based on Capacitance Modulation

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【作者】 陈跃宁徐征赵谡玲尹飞飞

【Author】 CHEN Yue-Ning;XU Zheng;ZHAO Su-Ling;YIN Fei-Fei;Institute of Optoelectronics Technology,Beijing Jiaotong University;Physics Department,Liaoning University;

【机构】 Institute of Optoelectronics Technology,Beijing Jiaotong UniversityPhysics Department,Liaoning University

【摘要】 An electrical characteristic model of organic thin film transistors(OTFTs) is presented.The model is based on the capacitance modulation principle,i.e.the accumulated charges in the conductive channel are induced by the gate capacitance under an electric field.The current-voltage characteristics of the presented model are compared with the experimental data.According to the electrical characteristics of the model,it is explained that the operating process of OTFTs is actually modulated by the capacitance.The gate capacitance,the contact resistance,the contact barrier,and the field-effect mobility have a significant effect on the performance of OTFTs.

【Abstract】 An electrical characteristic model of organic thin film transistors(OTFTs) is presented.The model is based on the capacitance modulation principle,i.e.the accumulated charges in the conductive channel are induced by the gate capacitance under an electric field.The current-voltage characteristics of the presented model are compared with the experimental data.According to the electrical characteristics of the model,it is explained that the operating process of OTFTs is actually modulated by the capacitance.The gate capacitance,the contact resistance,the contact barrier,and the field-effect mobility have a significant effect on the performance of OTFTs.

【基金】 Supported by the National Natural Science Foundation of China under Grant No 51272022;the National Basic Research Program of China under Grant No 2010CB327704;New Century Excellent Talents in University under Grant No NCET-10-0220;the Research Fund for the Doctoral Program of Higher Education under Grant No 20120009130005;the Fundamental Research Funds for the Central Universities under Grant No 2012JBZ001
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2013年03期
  • 【分类号】O484.42
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