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An Analytical Model of SiGe Heterojunction Bipolar Transistors on SOI Substrate for Large Current Situations

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【作者】 徐小波张滨杨银堂李跃进

【Author】 XU Xiao-Bo;ZHANG Bin;YANG Yin-Tang;LI Yue-Jin;School of Electronic and Control Engineering,Road Traffic Detection and Equipment Engineering Research Center,Chang’an University;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University;

【机构】 School of Electronic and Control Engineering,Road Traffic Detection and Equipment Engineering Research Center,Chang’an UniversityKey Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University

【摘要】 The large current effect of silicon germanium heterojunction bipolar transistors fabricated on thin silicon-oninsulator is included in the model.As the current is two-dimensional,the injection for large current is vertical plus horizontal and is quite different from that of the bulk device.Critical parameters modeling the large current,such as the collector injection width,the hole density and the corresponding potential in the injection region,are discussed,and the influence to the transit time is also analyzed.

【Abstract】 The large current effect of silicon germanium heterojunction bipolar transistors fabricated on thin silicon-oninsulator is included in the model.As the current is two-dimensional,the injection for large current is vertical plus horizontal and is quite different from that of the bulk device.Critical parameters modeling the large current,such as the collector injection width,the hole density and the corresponding potential in the injection region,are discussed,and the influence to the transit time is also analyzed.

【基金】 Supported by the Pre-research Foundation from the National Ministries and Commissions of China(Nos 51308030201 and 9140A080509DZ0106)
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2013年02期
  • 【分类号】TN322.8
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