节点文献
Graphene Domains Synthesized on Electroplated Copper by Chemical Vapor Deposition
【摘要】 Electroplated Cu,which can be compatible with integrated circuit technology and large-scale silicon wafers,is explored as a substrate to synthesize graphene domains by ambient-pressure chemical vapor deposition.Hexagonal single crystal domains of graphene are synthesized on electroplated Cu under dilute methane gas How.Scanning electron microscopy images of graphene domains grown on electroplated Cu indicate that the domain size is timedependent,and the domains can cross Cu grain boundaries and are distributed more uniformly on electroplated Cu surface than those grown on Cu foil.
【Abstract】 Electroplated Cu,which can be compatible with integrated circuit technology and large-scale silicon wafers,is explored as a substrate to synthesize graphene domains by ambient-pressure chemical vapor deposition.Hexagonal single crystal domains of graphene are synthesized on electroplated Cu under dilute methane gas How.Scanning electron microscopy images of graphene domains grown on electroplated Cu indicate that the domain size is timedependent,and the domains can cross Cu grain boundaries and are distributed more uniformly on electroplated Cu surface than those grown on Cu foil.
- 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2013年02期
- 【分类号】TN304.055