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Ultrafast and Broadband Terahertz Switching Based on Photo-Induced Phase Transition in Vanadium Dioxide Films

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【Author】 CHEN Zhi;WEN Qi-Ye;DONG Kai;SUN Dan-Dan;QIU Dong-Hong;ZHANG Huai-Wu;National Key Laboratory of Science and Technology of Communication,University of Electronic Science and Technology of China;State Key Laboratory of Electronic Thin films and Integrated Devices,University of Electronic Science & Technologyof China;

【机构】 National Key Laboratory of Science and Technology of Communication,University of Electronic Science and Technology of China； State Key Laboratory of Electronic Thin films and Integrated Devices,University of Electronic Science & Technologyof China；

【摘要】 Single-phase VO₂ thin films are sputtering deposited on BK7 substrates,and siarp insulator-to-metal phase transition is obtained with a resistivity change of four orders of magnitude.Terahertz（THz） pump-probe measurements reveal that by illuminating the films with a low pumping power of 143μJ/cm²,VO₂ films exhibit an ultrafast optical switching to THz transmission within 8ps.Furthermore,the THz switching ratio reaches over80%in a wide frequency range from 0.3 to 2.5 THz.All these outstanding features indicate a strong potential of VO₂ films for broadband terahertz wave switching and modulation applications.更多还原

【Abstract】 Single-phase VO₂ thin films are sputtering deposited on BK7 substrates,and siarp insulator-to-metal phase transition is obtained with a resistivity change of four orders of magnitude.Terahertz（THz） pump-probe measurements reveal that by illuminating the films with a low pumping power of 143μJ/cm²,VO₂ films exhibit an ultrafast optical switching to THz transmission within 8ps.Furthermore,the THz switching ratio reaches over80%in a wide frequency range from 0.3 to 2.5 THz.All these outstanding features indicate a strong potential of VO₂ films for broadband terahertz wave switching and modulation applications.更多还原

【基金】 Supported by the National Nature Science Foundation of China under Grant Nos 61131005 and 61021061;Keygrant Project of the Ministry of Education of China(No 313013);the New Century Excellent Talent Foundation(No NCET-11-0068);Sichuan Youth S&T Foundation(No 2011JQ0001);Specialized Research Fund for the Doctoral Program of Higher Education(No20110185130002);the Fundamental Research Funds for the Central Universities(No ZYGX2010J034);the CAEP THz Science and Technology Foundation(No CAEPTHZ201207)

【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2013年01期

【分类号】O484

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