【摘要】 低成本、大面积、沉积速率高、均匀性好、光电性能优良的Al掺杂ZnO薄膜(AZO)制备技术依然是透明导电薄膜领域研究的重点之一。本文采用冷壁式气溶胶辅助化学气相沉积(AACVD)技术在玻璃衬底上制备了AZO透明导电薄膜,研究了衬底温度对薄膜结构和光、电性能的影响。利用X射线衍射、原子力显微镜、紫外-可见光谱和光致发光光谱等对样品进行了表征。结果表明:在AACVD法生长AZO薄膜的过程中,衬底温度对AZO薄膜晶面的择优取向生长影响呈起伏式变化。明显的电学性能的转变温度发生在约400℃,光学性能和晶面的择优取向生长变化出现在约450℃。讨论了温度对AACVD法制备AZO透明导电薄膜结构和光、电性能影响的微观机制。400℃时沉积的AZO薄膜方阻190Ω/□,平均透过率为80%。更多还原

【Abstract】 Al-doped ZnO thin films(AZO) fabrication technique with low cost,large area,high deposition rate,well uniformity and excellent optical and electrical properties has been one of the most important aims in the transparent conductive oxide films research field.AZO thin films were grown on the glass substrates by cold-wall aerosol-assisted chemical vapour deposition(AACVD) method in this paper.Structural,optical and electrical properties of AZO films grown at different substrate temperature were investigated in detail.The samples were tested by X-Ray Diffraction,Atomic Force Microscopy,UV-Vis and Photoluminescence Spectroscopy.Results indicate that influence of the substrate temperature on the preferred orientation growth of AZO films appears undulant change during the course of AZO film deposited by AACVD.Distinct electrical properties transition takes place at around 400 ℃.Optical properties and preferred orientation growth of the ZnO films transition take place at around 450 ℃.Microcosmic mechanism was discussed that the effect of substrate temperature on the structural,optical and electrical properties of AZO films grown by AACVD method.Sheet resistance and the average transmittances in the visible regions of AZO films grown at 400 ℃ is about 190 Ω/□,80% respectively.更多还原