【摘要】 采用射频等离子体增强化学气相沉积(RF-PECVD)技术,对P/I/N型单结非晶硅锗电池进行研究。通过优化溅射后腐蚀ZnO∶Al衬底的横纵向尺寸,改善其光散射特性,可有效提升非晶硅锗电池的长波响应。针对恒定梯度的非晶硅锗电池填充因子差的问题,通过对非晶硅锗本征层设计合适的梯度带隙,可改善本征层空穴输运特性,使电池填充因子显著提高。在优化的光电结构设计基础上,单结非晶硅锗电池转换效率达9.07%,将其应用到a-Si∶H/a-SiGe∶H双结叠层电池中,效率达到12.03%。更多还原

【Abstract】 P /I /N type single junction amorphous silicon germanium solar cells were investigated with radio frequency plasma enhanced chemical vapor deposition( RF-PECVD) technique. By means of optimizing the lateral and vertical feature size of etched sputtering ZnO ∶ Al substrates, the scattering properties were improved to increases the long wavelength response of amorphous silicon germanium solar cells( a-SiGe∶H) efficiently. In the light of the bad fill factor of a-SiGe∶H solar cells deposited with constant profiling,the hole transport property was improved efficiently by designing proper band gap profiling in a-SiGe∶ H intrinsic layers,which results in obvious improvement of fill factor. The conversion efficiency of 9. 07% of single junction a-SiGe ∶ H solar cell, and 12. 03% for the corresponding a-Si∶H / a-SiGe∶H tandem solar cell were achieved based on optimized photoelectric structure design.更多还原