【摘要】 采用中频交流磁控溅射方法直接溅射CIGSe靶材,制备得到用于太阳电池吸收层的CIGSe薄膜。采用SEM、XRD、Raman、XRF、Hall等方法观察和分析主要工艺参数基底温度和溅射气压对薄膜表面形貌、组织结构、成分、电阻率以及载流子浓度的影响。结果表明,基底温度在250℃以上时,薄膜的黄铜矿相特征明显;当基底温度在250～300℃时,薄膜的电阻率和载流子浓度在理想范围之内。提高溅射气压,薄膜的沉积速率降低,当溅射气压达到0.7～0.9Pa时,溅射速率趋于稳定;溅射气压增大,薄膜的结晶性增强,溅射气压达到0.7Pa时,薄膜的XRD特征峰较明显;提高溅射气压,薄膜的电阻率降低,载流子浓度升高,当溅射气压达到0.7Pa时,薄膜电阻率和载流子浓度在理想范围之内。基底温度和溅射气压对薄膜成分无影响,薄膜成分主要由靶材成分决定。更多还原

【Abstract】 CuIn x Ga1- x Se2thin films have been deposited by magnetron sputtering from a CIGSe target. SEM,XRD,Raman,XRF,Hall were used to observe and analyze the compositions,microstructures,surface morphologies and electrical properties of the films. The results showed the crystalline quality of CIGSe thin films could be improved by increasing substrate temperature especially at substrates temperatures higher than 250℃. It was found that the ideal electrical resistivity and carrier concentration of the films could be obtained when substrates temperatures were between 250℃ to 300℃. When sputtering pressure was increased,the sputtering rate and the electrical resistivity were lower and the carrier concentration was higher. When sputtering pressure was 0. 7Pa,films with the ideal electrical resistivity and carrier concentration could be obtained. Substrate temperatures and sputtering pressures have no effects on composition of films,which is determined by the composition of CIGSe target.更多还原