【摘要】 利用脉冲激光沉积法在石英基底上沉积铜铟镓硒薄膜为前驱物,采用波长1 064 nm的近红外脉冲激光在不同能量密度下对其进行退火晶化.对薄膜的光学特性、晶体结构和形貌等进行表征分析,结果表明,随着激光能量密度增加,铜铟镓硒薄膜结晶度增加,晶粒尺寸变大,压应力减小,禁带宽度增加.当激光能量密度为325 mJ/cm2时,薄膜的结晶度达最高值29.46%,晶粒尺寸达最大为15.4 nm,压应力最小,薄膜结晶质量最好,过低和过高的能量密度都不利于薄膜的结晶.同时分析了高能量密度时薄膜表面条纹的形成机理.更多还原

【Abstract】 CuIn 1-x Ga x Se 2( CIGS) films were deposited on quartz substrate by pulsed laser deposition as precursors and annealed by the 1 064 nm near infrared pulse laser at different energy density. The optical properties,microstructures,surface morphology were characterized with spectrophotometer,X-ray diffractometry( XRD),scanning electron microscopy( SEM) respectively. The results show that with the laser energy density increasing,the crystallinity of CIGS films increases; grain size becomes larger; compressive stress decreases; band-gap increases. When the laser energy density reaches 325 mJ / cm2,the crystallinity of films rises up to 29. 46%; the grain size reaches the maximum 15. 4 nm; the compressive stress is minimum. The crystallization quality is the best,and the crystallinity of film is bad at lower or higher energy density. In addition,the formation mechanism of stripes on film surface annealed at high energy density was analyzed.更多还原