【摘要】 采用传统陶瓷烧结工艺制备了(K0.44Na0.5Li0.06)(Nb0.89Ta0.05Sb0.06)O3+x(质量分数)Ga2O3无铅压电陶瓷,研究了掺杂不同Ga2O3含量对(K0.44Na0.5Li0.06)(Nb0.89Ta0.05Sb0.06)O3陶瓷的晶相、微观结构和电学性能的影响.研究结果表明:x在0～2变化范围内,陶瓷为单一四方相的钙钛矿结构,具有良好的铁电性能;随着体系中Ga2O3含量的增加,陶瓷的最佳烧结温度逐渐降低;Ga2O3的掺杂导致陶瓷晶粒变小,陶瓷的铁电四方相-顺电立方相的转变温度即居里温度TC有少许上升,但陶瓷的压电性能明显劣化.更多还原

【Abstract】 Lead-free piezoelectric ceramics(K0.44Na0.5Li0.06)(Nb0.89Ta0.05Sb0.06)O3 +x(mass fraction)Ga2O3 were fabricated by conventional ceramics sintering technique,and their crystalline phase,microstructure and electrical properties were studied.The results of X-ray diffraction analysis show that all the ceramics can be well-sintered and exhibit a dense microstructure and pure tetragonal perovskite phase.All the ceramics possess good ferroelectric properties at 0≤x≤2.With the concentration of Ga2O3 increasing,the optimum sintering temperature of the ceramics gradually decreases.After the addition of Ga2O3,the grains of the ceramics become smaller and Curie temperature TC of the ceramics gradually increases.But the ceramics exhibit poor dielectric properties.更多还原