【摘要】 气相掺杂法因其简易灵活、生产周期短、成本较低的优点成为生产区熔硅单晶重要的辅助方法。本文根据区熔(FZ)硅单晶气相掺杂原理,结合单晶生长速度、单晶直径、气体流量、气体浓度、掺杂物的分凝、单晶对掺杂气体吸收率等一系列生长条件,进行理论计算并与实际生产相结合,进一步推算出掺杂量与电阻率关系的公式。通过该公式,可以更加准确控制气相掺杂硅单晶的电阻率,使理论计算与实际电阻率误差从20%降低到10%,从而降低生产成本。更多还原

【Abstract】 Gas doping method is an important auxiliary method of Float-Zone silicon single crystal due to its simple,flexible,short production cycle,lower costs and so on.Based on the principle of the gas doping technique,theoretical calculation of relations between resistivity and doping quantity is investigated considering diameter and growth rate of single silicon crystal,gas flowing and concentration,impurity segregation and absorption of doping gas by the crystal.A formula is gained which can more precisely control the resistivity of the crystal and decrease the error between theoretical calculation and the actual resistivity from 20% to 10% and thus,reduce the commercial cost of the doping process.更多还原