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Cu₂O薄膜的电化学沉积和生长机理研究

Study on the Growth Mechanism of Cu₂O Films by Electrochemical Deposition

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【Author】 ZHAO Wen-yan1,TIAN Chuan-jin1,WANG Chang-an1,2,XIE Zhi-peng1,2,YANG Hai-bin3,FU Wu-you3(1.School of Material Science and Engineering,Jingdezhen Ceramic Institute,Jingdezhen 333403,China; 2.Department of Materials Science and Engineering,Tsinghua University,Beijing 100084,China; 3.State Key Laboratory of Superhard Materials,Jilin University,Changchun 130012,China)

【机构】景德镇陶瓷学院材料科学与工程学院；吉林大学超硬材料国家重点实验室；清华大学材料科学与工程系；

【摘要】采用酸性醋酸铜体系,在透明导电玻璃(ITO)上恒电位沉积Cu2O薄膜,研究阴极还原Cu2O的电化学行为,利用X射线衍射(XRD)和场发射扫描电子显微镜(SEM)分析了Cu2O薄膜的微观结构和表面形貌,通过控制电沉积时间,研究Cu2O薄膜的表面形貌变化规律,讨论了Cu2O的生长机理。更多还原

【Abstract】 Cu2O thin film were deposited on transparent conductive glass(ITO) prepared by constant potential deposition,using acid copper acetate system,and the electrochemical behavior of the cathode reduction Cu2O was studied.The microstructure and surface morphologies of Cu2O films were characterized by X-ray diffraction(XRD) and field emission scanning electron microscopy(SEM).The laws of Cu2O films surface morphology changes with electrochemical deposition time increases were studied by SEM.The growth mechanism of Cu2O film was discussed.更多还原