【摘要】 采用溶胶-凝胶法在氧化铟锡(ITO)导电玻璃基底上制备了不同掺杂浓度的Li∶ZnO薄膜,并且利用场发射扫描电子显微镜(FE-SEM)、X射线衍射仪(XRD)、紫外-可见-近红外分光光度计(UV-VIS-NIR)、荧光光谱仪(PL)多种测试手段研究了不同掺锂浓度对ZnO薄膜的结构形貌、晶格常数、禁带宽度以及光致发光的影响。结果显示,Li的掺入导致ZnO薄膜的晶格常数减小,同时禁带宽度也减小。光致发光谱表明,掺Li后的ZnO薄膜的可见光发光峰由绿光发光峰和黄光发光峰组成,并且发生红移。我们认为,黄光发射可能是电子由单电离氧空位VO+到缔合缺陷LiZnVO的跃迁引起的,并且提出了缔合缺陷LiZnVO的结构模型。更多还原

【Abstract】 ZnO thin films with different Li doping concentrations were successfully prepared on ITO conducting glass substrates by sol-gel method.The effects of Li doping concentrations on the structure,surface morphology,lattice parameter,optical band gap and photoluminescence of ZnO thin films were analyzed by XRD,SEM,UV-VIS-NIR spectrometer and fluorescence spectrophotometer,respectively.The results show that the lattice parameters become smaller after doping,and the optical band gap tends to be narrow simultaneously.Photoluminescence spectra display that the broad visible emission peaks consist of green emission and yellow emission and exhibit red shift with the increase of Lithium concentration.It is considered that the yellow emission is presumably attributed to electron transition from single ionized oxygen vacancy V+O to associated defect LiZnVO,and the configuration model of associated defect LiZnVO is also suggested.更多还原