【摘要】 采用多光束应力实时测量装置监控并分析了磁控溅射Si和SiNx薄膜的总力及应力演化过程。在两种膜层中均观察到了应力释放及恢复现象。Si膜中应力是可逆的,而SiNx膜中应力是部分可逆的。物理吸附和解吸附分别是应力释放和恢复的主要原因。不可逆的应力分量来源于化学吸附,基于吸附机制建立了一个应力释放模型。更多还原

【Abstract】 An in situ multi-beam optical stress sensor system was used to monitor and analyze the force per unit width and stress evolution during and after the deposition of magnetron-sputtered Si and SiNxfilms.A rapid stress relaxation,as well as a recovery,was observed in both films.Stress in Si films was reversible,while partially reversible in SiNxfilms.Physical adsorption and desorption are the main factors responsible for the stress relaxation and recovery.The non-reversible stress component results from chemical adsorption.And a model based on adsorption is proposed to explain the stress relaxation.更多还原