【摘要】 从基本半导体物理出发,通过求解载流子连续性方程,建立了能够定量描述引起CMOS反相器内部瞬态闩锁效应的微波脉冲功率阈值与脉冲宽度关系的解析理论模型。通过与仿真结果以及文献中实验数据的对比,验证了该理论模型的正确性。该理论模型表明,引起CMOS反相器内部瞬态闩锁效应的微波脉冲功率阈值首先随着脉冲宽度增加逐渐降低,但是存在一个明显拐点区域,当脉冲宽度超过该区域之后,引起闩锁效应的功率阈值变化不甚明显。更多还原

【Abstract】 Based on the basic principle of semiconductor physics,an analytical theoretical model was proposed to show the relationship between the microwave pulse power threshold triggering the internal transient latch-up in the CMOS inverter and pulse width quantitatively by solving the continuity equations for minority carriers.By comparing the proposed theoretical model with simulated results and experimental data reported in literatures,the correctness of the theoretical model was verified.Furthermore,the model suggests that the power threshold triggering the internal transient latch-up in the CMOS inverter is a decreasing function of pulse width as the pulse width is short.However,there is an inflexion range and the power threshold varies little when the pulse width exceeds the inflexion range.更多还原