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Design and performance of a polymer Mach-Zehnder interferometer electro-optic modulator at 1.55 μm

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【作者】 郑传涛梁磊闫云飞马春生张大明

【Author】 ZHENG Chuan-tao , LIANG Lei , YAN Yun-fei , MA Chun-sheng , and ZHANG Da-ming State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

【机构】 State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University

【摘要】 Based on poled guest-host electro-optic (EO) polymer DR1/SU-8, a Mach-Zehnder interferometer (MZI) EO modulator operated at 1.55 μm is proposed. For achieving high response speed and high EO modulation efficiency, both waveguide structure and electrode structure are especially optimized. The impedance match and less index mismatch are achieved. The final characteristic impedance of electrode is about 49.4 Ω, and the microwave index and the light-wave index are 1.5616 and 1.6006, respectively. The device is fabricated using wet-etching technique and inductively coupled plasma (ICP) etching technique, and its performance is measured at 1.55 μm. Experimental results show that when the applied voltage is tuned, the modulator can be changed from ON state to OFF state. The insertion loss at ON state is 12 dB and the extinction ratio between ON and OFF states is about 10 dB. The high response speed is in nano-second level for a square-wave signal. Therefore, the modulator possesses potential applications in high-speed optical networks on chip.

【Abstract】 Based on poled guest-host electro-optic (EO) polymer DR1/SU-8, a Mach-Zehnder interferometer (MZI) EO modulator operated at 1.55 μm is proposed. For achieving high response speed and high EO modulation efficiency, both waveguide structure and electrode structure are especially optimized. The impedance match and less index mismatch are achieved. The final characteristic impedance of electrode is about 49.4 Ω, and the microwave index and the light-wave index are 1.5616 and 1.6006, respectively. The device is fabricated using wet-etching technique and inductively coupled plasma (ICP) etching technique, and its performance is measured at 1.55 μm. Experimental results show that when the applied voltage is tuned, the modulator can be changed from ON state to OFF state. The insertion loss at ON state is 12 dB and the extinction ratio between ON and OFF states is about 10 dB. The high response speed is in nano-second level for a square-wave signal. Therefore, the modulator possesses potential applications in high-speed optical networks on chip.

【关键词】 modulatorinterferometeropticwaveguideimpedanceextinctionmicrowaveoperatedcouplermatch
【基金】 the National Science Foundation Council of China (Nos.61107021, 61177027 and 61077041);the Ministry of Education of China (Nos.20110061120052 and 20120061130008);the China Postdoctoral Science Foundation Funded Project (Nos.20110491299 and 2012T50297);the Special Funds of Basic Science and Technology of Jilin University (Nos.201103076 and 200905005)
  • 【文献出处】 Optoelectronics Letters ,光电子快报(英文版) , 编辑部邮箱 ,2013年04期
  • 【分类号】TN761
  • 【被引频次】2
  • 【下载频次】36
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