【摘要】 绝缘栅双极型晶体管(IGBT)是一种新型的电力电子器件,由于具有良好的特性,在电力电子装置中得到了非常广泛的应用。分析了IGBT的物理结构和工作原理,得出IGBT元胞结构中寄生了一个等效的晶闸管器件,这是引发擎住效应的内部原因。总结了引发擎住效应的外电路条件,即过大的集电极电流或过大的集电极—发射级电压变化率。利用PSpice电路仿真软件建立了一个IGBT擎住效应教学模型电路,并进行具体的分析。更多还原

【Abstract】 Insulated Gate Bipolar Transistor(IGBT) is one of new power electronic devices, it has been widely applied in power electronic equipment because of the good characteristics. This paper analyzed the physical structure and working principle of IGBT, and found that there is a kind of equivalent thyristor parasitized in the cell of IGBT, this is the internal reason that induced latch-up effect. We also summarized the effect of external circuit that induced latch-up effect of IGBT, it is the excessive collector current or collector- emitter voltage regulation. A teaching model of IGBT latch-up effect has been established with PSpice simulation software, and a concrete analysis has also been carried on.更多还原