【摘要】 介绍了一种新型的红外探测器材料硒镉汞(HgCdSe)的最新研究进展,以及其所使用的衬底材料ZnTe/Si(211)和GaSb(211)的最新研究情况。通过与碲镉汞(HgCdTe)材料的对比可看出,硒镉汞材料的性能优良,比碲镉汞性能更稳定、更易生长,并且有较为成熟的衬底材料,辅以在同是汞基材料-碲镉汞上面所取得的生长经验,有望成为替代碲镉汞的下一代红外探测材料,极具应用前景。更多还原

【Abstract】 The recent development of a new type of Hg-based infrared material-HgCdSe is introduced,and the up-todate research progress of its substrates including ZnTe / Si( 211) and GaSb( 211) is presented. Compared with HgCdTe,HgCdSe has higher performance,and its growth is easier,meanwhile it has mature substrate. It is considered that HgCdSe has the potential to be a powerful infrared material for the next generation detectors.更多还原