【摘要】 实验中使用在蓝宝石衬底上用低压金属有机化学气相沉积(MOCVD)生长的AlGaN基p-i-n结构材料,通过对工艺流程的优化设计,制作了背照射p-i-n型AlGaN日盲紫外探测器,获得了较高的外量子效率。材料中p区和i区的Al组分为40%,n区Al组分为65%。探测器为直径500μm的圆形,光谱响应起止波长为260~310 nm,峰值响应波长283 nm。零偏压下,暗电流密度为2.7×10-10Acm-2,对应的R0A参数为3.8×108Ωcm2,峰值响应率为13 mA/W,对应的峰值探测率为1.97×1012cmHz1/2W-1。其在-7 V偏压下,峰值响应率达到148 mA/W,对应的外量子效率达到63%。更多还原

【Abstract】 By an optimized fabricating process,a kind of solar-blind ultraviolet photodetector was designed and fabricated used AlGaN material grown on sapphire substrate by metal organic chemical vapor deposition(MOCVD) method.The external quantum efficiency gets well improved.The structure of the device is back-illuminated p-i-n type.Al mole factor is 40% in both p and i type layers and it is 65% in the n type lawyer.The shape of the device is a circle and its diameter is 500 μm.The spectral response of the device starts form 260-310 nm while its peak response occurs at 283 nm.Under zero bias,a dark current density of 2.7×10-10 Acm-2 and a responsivity of 13 mA/W are found which corresponds to a parameter R0A of 3.8×108 Ωcm2 and a detection rate of 1.97×1012 cmHz1/2W-1.Under-7 V bias,the responsivity reaches to 148 mA/W,corresponding to an external quantum efficiency of 63%.更多还原