AlGaN metal-semiconductor-metal ultraviolet photodetectors on sapphire substrate with a low-temperature AlN buffer layer

【摘要】 Unintentionally doped AlGaN thin films are grown on c-plane(0001)sapphire substrate by metal-organic chemical vapor deposition,and low-temperature AlN is deposited onto sapphire substrate used as a bu?er layer.AlGaN metal-semiconductor-metal ultraviolet photodetectors with Ni/Au interdigitated contact electrodes are then fabricated by lift-off technology.The dark current of the AlGaN photodetectors is5.61×10-9A at 2-V applied bias and the peak response occurrs at 294 nm.更多还原

【Abstract】 Unintentionally doped AlGaN thin films are grown on c-plane(0001) sapphire substrate by metal-organic chemical vapor deposition, and low-temperature AlN is deposited onto sapphire substrate used as a bu?er layer. AlGaN metal-semiconductor-metal ultraviolet photodetectors with Ni/Au interdigitated contact electrodes are then fabricated by lift-off technology. The dark current of the AlGaN photodetectors is 5.61×10-9 A at 2-V applied bias and the peak response occurrs at 294 nm.更多还原