【摘要】 4°偏轴SiC衬底上生长的外延薄膜容易出现台阶形貌,外延薄膜表面的台阶形貌对后续制作的器件性能有着一定的影响。主要研究了进气端C/Si比及生长前刻蚀工艺对4°偏轴衬底外延的影响。采用外延生长前的氢气刻蚀工艺,结合掺杂浓度缓变的缓冲层设计,在4°偏轴的SiC衬底上制得了表面无台阶形貌的SiC SBD结构外延材料。利用优化工艺生长的4°偏轴衬底上的SBD结构外延材料目前已经全面应用于600～1 700V SBD器件的研制。更多还原

【Abstract】 Epilayers grown on 4° off-axis SiC substrates suffer from step-bunching which is harmful for device performance.The influence of input C/Si ratio and in-situ pre-growth etching process on epilayer morphology was investigated in this paper.A SBD structure epilayer on 4° off-axis SiC substrate without step-bunching was grown by using in-situ pre-growth H2 etching process and a buffer layer design with gradual changing doping concentration.The SiC SBD structure epilayers obtained by optimized process have been applied for 600～1 700 V SBD device fabrication.更多还原