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修饰掺硼金刚石电极循环伏安法检测尿酸

Detection of uric acid with modified boron-doped diamond electrodes by cyclic voltammetry

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【作者】 陈凯玉朱宁戴玮张聪聪尹振超吴小国

【Author】 CHEN Kai-yu1,ZHU Ning1*,DAI Wei2,ZHANG Cong-cong1,YIN Zhen-chao1, WU Xiao-guo1(1.Tianjin Key Laboratory of Film Electronics and Communication Devices,School of Electronic Information Engineering,Tianjin University of Technology,Tianjin 300384,China;2.College of Precision Instrument and Opto-electronics Engineering,Tianjin University,Tianjin 300072,China)

【机构】 天津理工大学电子信息工程学院,天津市薄膜电子与通信器件重点实验室天津大学精密仪器与光电子工程学院

【摘要】 用直流等离子体喷射化学气相沉积(CVD)法制备掺硼金刚石(BDD)薄膜电极。通过扫描电镜(SEM)观察到薄膜表面分布均匀致密;霍尔测试仪检测薄膜的电阻率为0.023Ω.cm,载流子浓度为6.423×1019 cm-3;循环伏安法(CVa)测得其电极电势窗为3.4V;分析了浓度为10μmol/L的尿酸(UA)溶液在BDD电极表面的电化学响应,表明扫描速率的平方根与氧化峰电流呈线性关系。通过对比茜素黄、牛磺酸和L-半胱氨酸3种物质对BDD电极进行修饰,表明由L-半胱氨酸修饰BDD电极的电催化氧化能力最强;在浓度为1×10-7~1×10-4 mol/L范围内,浓度的对数与氧化峰电流呈线性关系,且检测限为1×10-8 mol/L。实验结果表明,20倍浓度的葡萄糖和抗坏血酸对UA的检测不构成影响。

【Abstract】 Boron-doped diamond(BDD) thin film electrode was made in hydrogen-argon carbon source by direct current(DC) plasma jet chemical vapor deposition(CVD) method,and surface uniform and dense distribution can be seen by scanning electro microscopy(SEM).The resistivity is 0.023 Ω·cm by the Hall test cytometry,and carrier concentration is 6.423×1019 cm-3.The potential window for electrode is 3.4 V measured by cyclic voltammetry(CVa),and the boron-doped diamond thin-film electrode′s electrochemical response is analyzed at 10 μmol/L of uric acid(UA).The scan rate is linear with oxidation peak current.In Alizarin yellow,taurine and L-cysteine modified BDD electrodes,the last one has the strongest electrocatalytic oxidation.The experimental results show that when the concentration of UA within the range of 1×10-7-1×10-4 mol/L,the logarithm of the concentrationt is linear with the oxidation peak current,and the detection limit is 1×10-8 mol/L.The 20-fold concentration of glucose and ascorbic acid does not affect the detection of uric acid.

【基金】 国家自然科学基金(50972105);天津市重大科技攻关(06YFGZSH00300)资助项目
  • 【文献出处】 光电子.激光 ,Journal of Optoelectronics.Laser , 编辑部邮箱 ,2013年05期
  • 【分类号】R318.51
  • 【被引频次】7
  • 【下载频次】389
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