【摘要】 采用俄歇电子能谱法(AES),对某芯片的正常引线键合点和失效引线键合点进行了分析.实验结果表明:失效引线键合点表面出现了Cl元素,其失效原因是在键合点处形成的氯化物腐蚀键合点,导致键合点失效;溅射20min后,键合点内发生Ni金属的迁移,这也是导致键合点失效的原因之一.更多还原

【Abstract】 The bonding points of both normal wire and failed wire of the chip were analyzed by Auger electron spectroscopy.The results showed that the element of the chlorine was found in the surface of the bonding point of failed wire,resulting in corrosion occured and chloride formed at the bonding point.The another possible reason of the failure was migration of Ni atom after 20min of sputtering at the bonding point.更多还原