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CdTe量子点敏化TiO2纳米棒光电极的制备及分析

Preparation and analysis of CdTe quantum dot-sensitized TiO2 nanorods photoelectrodes

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【作者】 郑丹赵鑫

【Author】 ZHENG Dan;ZHAO Xin;Photoelectronics and Communications Engineering Department, Vocational College of Wuhan Software Engineering;Institute of Physics and Electronic Information Engineering, Hubei University;

【机构】 武汉软件工程职业学院光电子与通讯工程系湖北大学物电学院

【摘要】 利用电化学沉积法在TiO2纳米棒阵列上沉积了CdTe量子点,通过调节沉积时的电量使整个TiO2纳米棒上覆盖了致密均匀的CdTe量子点,CdTe和TiO2形成了核壳结构。研究了沉积电量对FTO/TiO2/CdTe光电极的结构及光电性能的影响,发现随着沉积电量的增大,FTO/TiO2/CdTe光电极的吸收边发生红移。当沉积电量为0.9C时,在光强为0.1 W/cm2、AM 1.5 G标准模拟太阳光照射下,所制光电极产生最大的饱和光电流密度3.23×10–3A/cm2。

【Abstract】 The CdTe quantum dots were deposited on TiO2 nanorods array by convenient electrochemical deposition method.The entire TiO2 nanorods were covered with dense and uniform CdTe quantum dots by adjusting the total charge quantity during deposition,and the TiO2 and CdTe formed a core-shell structure.Effects of deposited charge quantity on structures and photoelectrochemical properties of FTO/TiO2 /CdTe photoelectrodes were studied.The results show that the absorption edges of FTO/TiO2 /CdTe photoelectrodes are red-shifted with the increasing of deposited charge quantity.When the deposited charge quantity is 0.9C,the prepared photoelectrode produces the a largest saturated photo current density of 3.23×10–3A/cm2under the irradiation of AM1.5 G simulated sunlight with intensity of 0.1 W/cm2.

  • 【文献出处】 电子元件与材料 ,Electronic Components and Materials , 编辑部邮箱 ,2013年09期
  • 【分类号】TM914.4
  • 【被引频次】2
  • 【下载频次】102
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