【摘要】 高强度聚焦超声(HIFU)功率源直接影响HIFU治疗的有效性和安全性。受功率MOSFET极间电容和导通电阻等寄生参数的影响,基于E类功率放大电路的HIFU功率源实际工作特性常偏离理想条件下的理论设计值。在理论设计的基础上,结合功率MOSFET等效电路模型,采用Saber软件对HIFU功率源的E类放大电路进行仿真,得到了放大器最佳工作状态时的谐振回路参数。实验测试表明,优化后的功率源工作效率和特性有显著的提高。更多还原

【Abstract】 High intensity focused ultrasound(HIFU) power source could directly affect the effectiveness and safety of the HIFU therapy. Affected by the electrode capacitance and on-resistance of power MOSFET, the actual working characteristics of the HIFU power source based on class E power amplifier often deviates from the theoretical design values under ideal conditions. Based on the theoretical design, the HIFU power source using class E amplifier circuit was simulated adopted Saber by combining the equivalent circuit model of power MOSFET. The resonant circuit parameters of best working condition were determined by simulation. Experimental tests showed that the working efficiency and characteristics of the power source is optimized significantly.更多还原