【摘要】 研究了两种具有埋界面漏的槽型技术(Trench)功率金属氧化层半导体场效晶体管(MOSFET)。利用埋于整个界面的漏n~+层缩短开态时载流子在高电阻率n~-漂移区的运动路径,从而降低器件比导通电阻,缓解功率MOSFET器件比导通电阻与击穿电压之间的矛盾。详细研究了器件结构参数对比导通电阻和击穿电压的影响。器件1为50~70 V级器件;器件2利用p型硅条增强降低表面电场(RESURF)效应及优化体内电场分布,使得器件性能进一步提高,在133 V的击穿电压时获得0.85 mΩ·cm~2的低比导通电阻。更多还原

【Abstract】 Two trench power metal-oxide-semiconductor field-effect transistors(MOSFET) with buried-interface-drain are studied.The buried-interface-drain n~+ region shortens the motion-path in the high-resistance n~- drift region for the carriers,and exhibits a lower specific on-resistance.Power MOSFET’s tradeoff between the breakdown voltage and specific on-resistance is relieved.The influences of structure parameters on the device performances are investigated.Devicel is 50~70 V class,p-type silicon of device2 inserted between the n~- drift region and oxide-filled trench leads to an enhanced reduced surface field(RESURF) effect and optimizes the distribution of the bulk electric field.An ultralow specific on-resistance of 0.85 mΩ·cm~2 is obtained with a breakdown voltage of 133 V for device2.更多还原