【摘要】 用电子回旋共振等离子体增强化学气相沉积(ECR-PECVD)法制备微晶硅薄膜,研究了放电气体对薄膜沉积速率、薄膜中H含量、择优取向和结晶度的影响。结果表明,以Ar作为放电气体时薄膜沉积速率比以H2作为放电气体时高1.5—2倍,但是薄膜的结晶度较低;以Ar作为放电气体时薄膜的H含量比以H2作为放电气体时的薄膜低;放电气体对薄膜的择优取向和晶粒度没有显著的影响。更多还原

【Abstract】 The microcrystalline silicon films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition(ECR-PECVD) using SiH4/Ar and SiH4/H2gaseous mixture.The effects of dilute gas on deposition rate,crystallinity,grain size and the configuration of H existing in microcrystalline silicon films were investigated.The results show that the deposition rate of the film using Ar as discharge gas is 1.5-2 times higher than that using H2,but the film crystallinity is lower.At the same time,the concentration of hydrogen in the films deposited using SiH4/Ar is less than that of using SiH4/H2,but the preferred orientations and the grain sizes of the films are analogous.更多还原