【摘要】 采用电子束蒸发法在Si(111)基片上制备厚度约为100nm的Ni81Fe19薄膜,研究了基片温度对薄膜微观结构及磁性能的影响。结果表明,随着基片温度的升高,Ni81Fe19薄膜(111)衍射峰逐渐锐化,衍射峰强度显著增强,薄膜晶粒逐渐长大;薄膜的饱和磁化强度(Ms)及面内矫顽力(Hc)随基片温度的升高均逐渐增大;随着基片温度的升高,薄膜在9GHz下的共振场(Hr)呈单调降低的趋势,而铁磁共振线宽(ΔH)则先减小后增大最后基本保持不变。当基片温度为100℃时,薄膜铁磁共振线宽具有最小值ΔH=7.44kA/m(9GHz)。更多还原

【Abstract】 Ni81Fe19 thin films with thickness of about 100 nm were deposited on Si(111) substrates by electron beam evaporation.The effects of substrate temperature during deposition process on the microstructure and magnetic properties of Ni81Fe19 thin films were investigated.Results indicates that with rising substrate temperature the(111) diffraction peak of Ni81Fe19films sharpens gradually,the intensity of(111) diffraction peak enhances significantly and the film grains grow gradually.With increasing substrate temperature the saturation magnetization(Ms) and in-plane coercive force(Hc) increases gradually.As the substrate temperature increases,the resonance field decreases monotonically,while the ferromagnetic resonance linewidth(ΔH) first decreases and then decreases,and lastly remains nearly unchanged.For substrate temperature of 100℃,the film possesses the lowest ferromagnetic resonance linewidth of ΔH=7.44kA/m(9GHz).更多还原