【摘要】 以NiFeNb作为坡莫合金薄膜的缓冲层,用多靶磁控溅射系统制备了一系列坡莫合金薄膜样品:(Ni81Fe19)1-xNbx(t)/Ni81Fe19(20nm)/Ta(3nm),研究了Nb原子含量、缓冲层厚度、基片温度对坡莫合金薄膜各向异性磁电阻和微结构的影响。用四探针法测量薄膜样品的各向异性磁电阻值(AMR),用原子力显微镜(AFM)分析样品表面形貌,用X射线衍射仪(XRD)分析样品的相结构。结果表明,(Ni81Fe19)0.807Nb0.193缓冲层对提高坡莫合金薄膜AMR值的作用明显大于Ta缓冲层。对于Ni81Fe19厚度为20nm的坡莫合金薄膜,缓冲层中Nb含量为0.193时薄膜的AMR效应及相结构最佳;随着缓冲层厚度的增加,薄膜的AMR效应先增后减,在厚度为4nm时AMR达到最大值;随着基片温度的升高,薄膜的AMR随之增大,在温度为450℃时达到最大值,之后趋于稳定,最大AMR值达到3.76%。更多还原

【Abstract】 Using ternary NiFeNb as buffer layer,(Ni81Fe19)1-xNbx(t)/Ni81Fe19(20nm)/Ta(3nm) films were prepared by magnetron sputtering under appropriate conditions.Influence of Nb content,thickness of buffer layer and substrate temperature on their AMR and microstructure are investigated.AMR value,surface topography and phase composition of the films are characterized by four-probe technology,atom force microscope and X-ray diffraction,respectively.The experiment result shows that NiFeNb is superior to Ta as buffer layer in enhancing AMR value of permalloy films.The AMR value of Ni81Fe19(20nm) films reaches to a maximum of 3.76% under the optimum conditions with buffer layer thickness of 4nm,Nb content of 0.193,and the substrate temperature of 450℃.更多还原