【摘要】 采用射频磁控溅射法制备了c轴垂直膜面取向的M型钡铁氧体(BaM)薄膜,研究了溅射功率对BaM薄膜取向及磁性能的影响。结果表明,在溅射功率为80W、110W、140W和170W时所制备的BaM薄膜均具有一定程度的c轴垂直膜面取向,但溅射功率的增高会造成薄膜内晶粒取向混乱,导致薄膜磁晶各向异性降低;当溅射功率为140W时,薄膜具有最高饱和磁化强度(Ms)303kA/m和最小面外方向矫顽力(Hc⊥)191kA/m;适当低的溅射功率更有利于制得磁晶各向异性强的薄膜。更多还原

【Abstract】 RF magnetron sputtering method has been adopted to prepare M-type barium ferrite(BaM) films with c-axis orientation perpendicular to the film plane,and the effects of sputtering power on c-axis orientation and magnetic properties of BaM films were investigated.The results show that films deposited under sputtering power of 80W,110W,140W and 170W all possess a certain degree of c-axis orientation perpendicular to the film plane.Film deposited under sputtering power of 140W possesses the highest saturation magnetization(Ms) of 303kA/m and the lowest coercivity(Hc⊥) of 191kA/m.The conclusion that a proper low sputtering power is more favorable to prepare BaM films with higher magnetocrystalline anisotropy has been deduced.更多还原