【摘要】 近年来,Si基ZnO∶Al透明导电薄膜界面处Si的渗透对薄膜性能的影响引起了人们的关注。本文采用射频磁控溅射法,在石英和Si衬底上沉积了不同厚度的Al、Si弱掺杂(1wt.%)的ZnO薄膜(AZO∶Si),系统研究了膜厚(等价于Si的渗透深度)对薄膜电学、光学性质的影响。结果显示,膜厚在几十nm时,薄膜的电阻率、载流子浓度和迁移率都强烈地依赖于膜厚,在膜厚为19nm时,载流子浓度和迁移率接近最小,电阻率较大,且呈现p型导电特性。随着膜厚增加,载流子浓度和迁移率都变大,电阻率减小并趋于稳定,膜厚在396nm附近时电阻率最小是7×10-3Ωc#m,此时的载流子浓度和迁移率分别是1.54×1020cm-3和5.66cm2 V-1s-1。膜厚达300nm以上时,Si的影响已可忽略。结合薄膜的X射线衍射(XRD)图谱、X射线光电子能谱(XPS)和紫外-可见光(UV-Vis)透射光谱探讨了膜厚(Si的渗透深度或过渡层厚度)对薄膜性能的影响及其相关机制。更多还原

【Abstract】 Over the recent years,Si diffusion on the interface between Si substrate and Al doped ZnO(AZO) thin film and its influence on the performance of the film have attracted much attention.Al and Si weak-doped ZnO(AZO∶Si) thin films were prepared on quartz substrates by RF magnetron sputtering.Effects of film thickness,which is equivalent to Si doping depth,on electrical and optical properties of the films were systematically investigated by XRD,XPS,SEM,four-point probe,and UV-VIS spectroscopy.It was shown that the resistivity,carrier concentration and mobility of the films were strongly dependent on the film thickness.As the thickness was 19nm,the carrier concentration and mobility approached to the minimum value,and the resistivity reached the maximum value.With the increase in film thickenss,the carrier concentration and mobility increased,resistivity decreased and tended to reach a stable value.The minimum resistivity of 7×10-3Ω was obtained when the thickness was about 396nm,and carrier concentration and mobility was 1.54×1020 cm-3 and 5.66cm2V-1s-1,respectively.It is possible to deduce that the effective distance of AZO∶Si buffer layer between AZO films and Si substrates can be up to tens of nanometers.When thickness of AZO films is up to 300nm the effects of diffusion or doping of Si can be ignored.更多还原