【摘要】 利用原子层沉积法(ALD)在硫钝化后的n型InP表面沉积Al2O3薄膜进行二次钝化处理。通过光致发光(PL)测试和原子力显微镜(AFM)测试对样品的光学性质及表面形貌进行表征。硫钝化能够有效降低样品的表面态密度及无辐射复合几率,因此样品PL发光强度得到了极大提高。而样品表面的Al2O3可防止钝化层被氧化,尽管相对于沉积Al2O3薄膜前样品的光致发光强度有所降低,但样品的稳定性得到了改善,因此可进一步提高样品的发光性能。更多还原

【Abstract】 Al2O3 films were deposited on the surface of sulfur(S)-passivated n-type InP using atomic deposition(ALD).The optical properties and surface morphology of the treatments on InP were investigated by photoluminescence(PL)measurement and atomic force microscopy(AFM)measurement.The surface states density and nonradiative recombination velocity were reduced effectively with the S-treatment and thus the PL intensity was enhanced greatly.While the Al2O3 films could prevent the passivation layer from being oxidized,although the PL intensity decreased compared with the uncoated samples,but the stability of the coated samples was improved,and therefore the luminescent properties of the samples can be further enhanced.更多还原