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A surface-potential-based model for AlGaN/AlN/GaN HEMT

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【作者】 汪洁孙玲玲刘军周明珠

【Author】 Wang Jie;Sun Lingling;Liu Jun;Zhou Mingzhu;Department of Electrical Engineering,Zhejiang University;Key Laboratory of RF Circuits and Systems,Ministry of Education,Hangzhou Dianzi University;

【机构】 Department of Electrical Engineering,Zhejiang UniversityKey Laboratory of RF Circuits and Systems,Ministry of Education,Hangzhou Dianzi University

【摘要】 A new surface-potential-based model for AlGaN/AlN/GaN high electron mobility transistor(HEMT) is proposed in this paper. Since the high polarization effects caused by AlN interlayer favorably influence the two dimensional electron gas(2DEG) and scattering mechanisms, we first add spontaneous and piezoelectric charge terms to the source equation of surface-potential, and a mobility model for AlGaN/AlN/GaN HEMT is rewritten. Compared with TCAD simulations, the DC characteristics of AlGaN/AlN/GaN HEMT are faithfully reproduced by the new model.

【Abstract】 A new surface-potential-based model for AlGaN/AlN/GaN high electron mobility transistor(HEMT) is proposed in this paper. Since the high polarization effects caused by AlN interlayer favorably influence the two dimensional electron gas(2DEG) and scattering mechanisms, we first add spontaneous and piezoelectric charge terms to the source equation of surface-potential, and a mobility model for AlGaN/AlN/GaN HEMT is rewritten. Compared with TCAD simulations, the DC characteristics of AlGaN/AlN/GaN HEMT are faithfully reproduced by the new model.

【基金】 supported by the Major State Basic Research Development Program of China(No.2010CB327403);the Zhejiang Provincial Key Science and Technology Innovation Team(No.Gk110908002);the National Science Foundation of China(No.61102027)
  • 【文献出处】 Journal of Semiconductors ,半导体学报(英文版) , 编辑部邮箱 ,2013年09期
  • 【分类号】TN32
  • 【被引频次】3
  • 【下载频次】49
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