节点文献
A surface-potential-based model for AlGaN/AlN/GaN HEMT
【摘要】 A new surface-potential-based model for AlGaN/AlN/GaN high electron mobility transistor(HEMT) is proposed in this paper. Since the high polarization effects caused by AlN interlayer favorably influence the two dimensional electron gas(2DEG) and scattering mechanisms, we first add spontaneous and piezoelectric charge terms to the source equation of surface-potential, and a mobility model for AlGaN/AlN/GaN HEMT is rewritten. Compared with TCAD simulations, the DC characteristics of AlGaN/AlN/GaN HEMT are faithfully reproduced by the new model.
【Abstract】 A new surface-potential-based model for AlGaN/AlN/GaN high electron mobility transistor(HEMT) is proposed in this paper. Since the high polarization effects caused by AlN interlayer favorably influence the two dimensional electron gas(2DEG) and scattering mechanisms, we first add spontaneous and piezoelectric charge terms to the source equation of surface-potential, and a mobility model for AlGaN/AlN/GaN HEMT is rewritten. Compared with TCAD simulations, the DC characteristics of AlGaN/AlN/GaN HEMT are faithfully reproduced by the new model.
【Key words】 AlGaN/AlN/GaN HEMT; 2DEG; surface potential; polarization effects; mobility;
- 【文献出处】 Journal of Semiconductors ,半导体学报(英文版) , 编辑部邮箱 ,2013年09期
- 【分类号】TN32
- 【被引频次】3
- 【下载频次】49