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An I/Q DAC with gain matching circuit for a wireless transmitter

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【作者】 汤华莲庄奕琪景鑫张丽

【Author】 Tang Hualian,Zhuang Yiqi,Jing Xin,and Zhang Li Ministry of Education Key Laboratory of Wide Band-Gap Semiconductor Materials and Device,Xidian University, Xi’an 710071,China

【机构】 Ministry of Education Key Laboratory of Wide Band-Gap Semiconductor Materials and Device,Xidian University

【摘要】 <正>This paper presents a two-channel 12-bit current-steering digital-to-analog converter(DAC) for I and Q signal paths in a wireless transmitter.The proposed DAC has a full-scale output current with an adjusting range of 2 to 10 mA.A gain matching circuit is proposed to reduce gain mismatch between the I and Q channels.The tuning range is±24%of full scale and the minimum resolution is 1/16 LSB.To further improve its dynamic performance, the switch driver and current cell are optimized to minimize glitch energy.The chip has been processed in a standard 0.13μm CMOS technology.Gain mismatch between a 1-channel DAC and a Q-channel DAC is measured to be approximately 0.13%.At 120-MSPS sample rate for 1 MHz sinusoidal signal,the spurious free dynamic range (SFDR) is 75 dB.The total power dissipation is 62 mW and has an active area of 1.08 mm2.

【Abstract】 This paper presents a two-channel 12-bit current-steering digital-to-analog converter(DAC) for I and Q signal paths in a wireless transmitter.The proposed DAC has a full-scale output current with an adjusting range of 2 to 10 mA.A gain matching circuit is proposed to reduce gain mismatch between the I and Q channels.The tuning range is±24%of full scale and the minimum resolution is 1/16 LSB.To further improve its dynamic performance, the switch driver and current cell are optimized to minimize glitch energy.The chip has been processed in a standard 0.13μm CMOS technology.Gain mismatch between a 1-channel DAC and a Q-channel DAC is measured to be approximately 0.13%.At 120-MSPS sample rate for 1 MHz sinusoidal signal,the spurious free dynamic range (SFDR) is 75 dB.The total power dissipation is 62 mW and has an active area of 1.08 mm2.

【基金】 supported by the National Science and Technology Major Projects of China(No.2010ZX03002-001-02);the Fundamental Research Funds for the Central Universities(No.K50511250006)
  • 【文献出处】 Journal of Semiconductors ,半导体学报 , 编辑部邮箱 ,2013年06期
  • 【分类号】TN830;TN792
  • 【下载频次】32
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