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Avalanche-enhanced photocurrents in pin silicon waveguides at 1550 nm wavelength

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【Author】 Zhao Yong~(1,2),Xu Chao~1,Jiang Xiaoqing~(1,+),and Ge Huiliang~2 1 Department of Information Science and Electronics Engineering,Zhejiang University,Hangzhou 310027,China 2 Hangzhou Applied Acoustics Research Institute,Hangzhou 310012,China

【机构】 Department of Information Science and Electronics Engineering,Zhejiang University； Hangzhou Applied Acoustics Research Institute；

【摘要】 <正>The photocurrent effect in pin silicon waveguides at 1550 nm wavelength is experimentally investigated. The photocurrent is mainly attributed to surface-state absorption,defect-state absorption and/or two-photon absorption.Experimental results show that the photocurrent is enhanced by the avalanche effect.A pin silicon waveguide with an intrinsic region width of 3.4μm and a length of 2000μm achieves a responsivity of 4.6 mA/W and an avalanche multiplication factor of about five.更多还原

【Abstract】 The photocurrent effect in pin silicon waveguides at 1550 nm wavelength is experimentally investigated. The photocurrent is mainly attributed to surface-state absorption,defect-state absorption and/or two-photon absorption.Experimental results show that the photocurrent is enhanced by the avalanche effect.A pin silicon waveguide with an intrinsic region width of 3.4μm and a length of 2000μm achieves a responsivity of 4.6 mA/W and an avalanche multiplication factor of about five.更多还原

【关键词】 photodetector； silicon waveguide； photocurrent； avalanche effect；
【Key words】 photodetector； silicon waveguide； photocurrent； avalanche effect；

【基金】 supported by the Natural Basic Research Program of China(No.2013CB632105);the National Natural Science Foundation of China(No.61177055)

【文献出处】 Journal of Semiconductors ,半导体学报 , 编辑部邮箱 ,2013年06期

【分类号】TN312.7
【下载频次】23

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