节点文献

A multi-path gated ring oscillator based time-to-digital converter in 65 nm CMOS technology

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 江晨; 黄煜梅; 洪志良;

【Author】 Jiang Chen,Huang Yumei~+,and Hong Zhiliang State Key Laboratory of ASIC & System,Fudan University,Shanghai 201203,China

【机构】 State Key Laboratory of ASIC&System,Fudan University;

【摘要】 <正>A gated ring oscillator(GRO) based time-to-digital converter(TDC) is presented.To enhance the resolution of the TDC,a multi-path structure for the GRO is used to achieve a higher oscillation frequency and an input stage is also presented to equivalently amplify the input time difference with a gain of 2.The GRO based TDC circuit is fabricated in TSMC 65 nm CMOS technology and the core area is about 0.02 mm~2.According to the measurement results,the effective resolution of this circuit is better than 4.22 ps under a 50 MHz clock frequency. With a 1 ns input range,the maximum clock frequency of this circuit is larger than 200 MHz.Under a 1 V power supply,with a 200-800 ps input time difference,the measured power consumption is 1.24 to 1.72 mW at 50 MHz clock frequency and 1.73 to 2.20 mW at 200 MHz clock frequency.

【Abstract】 A gated ring oscillator(GRO) based time-to-digital converter(TDC) is presented.To enhance the resolution of the TDC,a multi-path structure for the GRO is used to achieve a higher oscillation frequency and an input stage is also presented to equivalently amplify the input time difference with a gain of 2.The GRO based TDC circuit is fabricated in TSMC 65 nm CMOS technology and the core area is about 0.02 mm~2.According to the measurement results,the effective resolution of this circuit is better than 4.22 ps under a 50 MHz clock frequency. With a 1 ns input range,the maximum clock frequency of this circuit is larger than 200 MHz.Under a 1 V power supply,with a 200-800 ps input time difference,the measured power consumption is 1.24 to 1.72 mW at 50 MHz clock frequency and 1.73 to 2.20 mW at 200 MHz clock frequency.

【基金】 supported by the Important National Science and Technology Specific Projects of China(No.2009ZX01031-003-002)
  • 【文献出处】 Journal of Semiconductors ,半导体学报 , 编辑部邮箱 ,2013年03期
  • 【分类号】TN752;TN792
  • 【被引频次】14
  • 【下载频次】112
节点文献中: 

本文链接的文献网络图示:

本文的引文网络