【摘要】 设计制作了适用于无致冷工作的通讯用1.3μm量子阱激光器材料,并制作成单模芯片进行特性分析研究。采用金属有机化学气相沉积(MOCVD)工艺生长了AlGaInAs/InP应变补偿量子阱材料,采用此外延材料制作的脊宽为2.5μm脊形波导结构FP单模激光器芯片,解理为250,500和750μm不同腔长,进行了内部参数提取,内量子效率ηi为76%、内损耗αi为7.06/cm、模式增益Γg0为81.90/cm、透明电流密度Jtr为1 045 A/cm2。对250μm腔长管芯镀膜,进行电光特性测试,室温性能指标为:阈值电流Ith<10 mA,斜率效率η=0.6 W/A,达到国际同类产品水平,实现1.3μm FP材料国产化。更多还原

【Abstract】 The materials of the uncooled 1.3 μm quantum well laser for the communication was designed and fabricated.The single-mode chips were made to analyze the characteristics.The AlGaInAs/InP strain-compensated quantum well materials were grown through the metal organic chemical vapor deposition(MOCVD) process,and the ridge waveguide structure FP single-mode laser chip with the ridge width of 2.5 μm was fabricated using the materials.The chip was cleaved to different cavity lengths of 250,500 and 750 μm,and the internal parameters were extracted.The internal quantum efficiency ηi is 76%,the inner loss αi is 7.06/cm,the mode gain Γg0 is 81.90/cm,the transparency current density Jtr is 1 045 A/cm2.The die with 250 μm cavity length was coated,and the electro-optical properties were tested.The results show that the threshold current Ith is less than 10 mA and the slope efficiency η is 0.6 W/A.The performance parameters at the room temperature reach the international level of similar products,and the 1.3 μm FP laser localization is realized.更多还原