【摘要】 阻变式随机存储器(RRAM)是目前新型存储器领域的研究热点。基于ZrO2材料,选取Al和Ag作为杂质元素。采用第一性原理方法计算了掺杂条件下ZrO2中氧空位的形成能、氧空位之间的作用能等重要参量。Al(富余)掺杂下,氧空位之间的相互作用能成负值,相互吸引抱团形成导电细丝,阻变特性明显改善,氧空位主导细丝形成。这与相关的实验结果是一致的。Ag掺杂下,Ag的金属性强,氧空位之间相互作用能全为正值,相互排斥。通过模拟观察,Ag主导了细丝形成,并改善了ZrO2材料的阻变特性。更多还原

【Abstract】 Resistive random access memory(RRAM) is a new research in the field of memory.Based on ZrO 2 material,Al and Ag were selected as impurity elements.Using the first principles to calculate the formation energy and interaction energy between oxygen vacancies which as important parameters in ionic doped ZrO 2 material.The interaction energy between oxygen vacancies becomes negative and then the oxygen vacancies attract each other and hold together to form conductive filaments which mixed with Al(surplus).In this way,oxygen vacancies play a leading role in the formation of filaments.All these are consistent with the relevant experimental results.By mixing Ag with a strong metallicity into the materials,the interaction energy between oxygen vacancies becomes positive and the endrgy excludes each other.By analoging and observing,Ag leads to the formation of filaments,and thus improves the resistive characteristics of the ZrO 2 material.更多还原