【摘要】 为了获得4H-SiC横向BJT器件高耐压下的高电流增益,文中通过降低漂移区的掺杂浓度(NDRI),使得漂移区内靠近基极方向的电场强度降低,从而使集-基结在基区的耗尽大幅减小。通过对基区的优化,就可以在高耐压下获得高电流增益。仿真结果表明,当漂移区内的掺杂浓度(NDRI)为3.3 1016cm-3时,4H-SiC横向BJT器件可以在保持较高耐压(3 000 V以上)的同时,集-基结在基区的耗尽最少。当基区掺杂浓度(PB)为3 1017cm-3、厚度(WB)为0.25 mm时,获得耐压高于3 000 V、电流增益近400的4H-SiC横向BJT器件。更多还原

【Abstract】 To obtain high current gain of 4H-SiC lateral bipolar junction transistor(BJT) with high breakdown voltage,a new method of achieving current gain was presented and confirmed by simulations.By decreasing doping concentration(NDRI) in the drift region of 4H-SiC lateral BJT,electric field at the base side of the drift region was lowed and collector-base junction depletion extension in the base region was suppressed.Therefore,a high current gain can be obtained by optimization of the base width(WB) and doping(PB) respectively.Simulation results show that when N DRI is decreased to 3.3 1016 cm-3,collector-base junction depletion extends in the base region least.And when with optimized WB of 0.25 mm and PB of 3 1017 cm-3,current gain of the 4H-SiC lateral bipolar junction transistor current gain close to 400 is achieved with breakdown voltage more than 3 000 V.更多还原