【摘要】 研究了在GaAs(001)衬底上外延生长的本征ZnTe薄膜样品在氮气氛中450～550℃下的快速退火行为。对于1 min退火的样品,随着退火温度的升高,ZnTe(004)峰双晶X射线(DCXRD)摇摆曲线的半高宽(FWHM)逐渐下降;样品表面粗糙度均方根值(RMS)由退火前的5.3 nm下降至4.7 nm左右。对于450℃退火5 min的样品,其晶体质量与550℃退火1 min的样品相当,但RMS值下降到4.26 nm。ZnTe薄膜表面的In电极之间在未退火时呈高阻状态,在适当条件下退火后In电极之间可以导通,且随着退火温度的降低,所需的退火时间将延长。但550℃退火时In电极的外观形貌发生改变且不能导通。更多还原

【Abstract】 The effects of rapid thermal annealing between 450-550 ℃ in nitrogen on ZnTe epilayers fabricated on GaAs(001) substrates were investigated.As to samples annealed for 1 min,the full-width at half-maximum(FWHM) from ZnTe(004) reflection in double-crystal X-ray diffraction(DCXRD) rocking curve decreases with an increase in the annealing temperature.The root-mean-square(RMS) roughness drops from 5.3 nm before the thermal treatment to about 4.7 nm after annealing.The crystalline quality of the epilayer annealed at 450 ℃ for 5 min is comparable with the sample treated at 550 ℃ for 1 min,whereas the RMS value decreases to 4.26 nm.The resistivity between indium electrodes on ZnTe film is high without annealing,while different electrodes can be connected after appropriate thermal treatment.The annealing duration needs to be extended when lower the annealing temperature.However,the indium electrodes which annealed at 550 ℃ change their feature and are still unconnected.更多还原