【摘要】 回顾了近年来CIGS薄膜太阳能电池无镉缓冲层的研究进展;着重介绍了In2S3,ZnS,Zn1-xMgxO三种可替代CdS缓冲层材料的常用制备方法及相关特性,并且对应给出了每种材料和方法获得的电池组件效率。展望了无镉缓冲层的发展前景,分析了化学水浴、原子层沉积、溅射三种缓冲层沉积技术各自在大规模工业化应用中的优劣势。认为溅射沉积技术是现阶段最理想的工业化制备技术,同时指出了无镉缓冲层在大规模工业化应用中亟需解决的问题。更多还原

【Abstract】 The latest progress in the development of deposition technology of the Cd-free buffer layers in the solar cells made of copper indium gallium diselenide(CIGS) films was tentatively reviewed.The discussions focused on three topics:first,the film growth techniques and related properties of the three alternative Cd-free buffer layer materials(In2S3,ZnS,and Zn1-xMgxO);next,the possible impacts of the three alternative films and their deposition techniques on the fabrication and performance of the solar cells;finally,the development trends of the Cd-free layers in fabricating the CIGS solar cells.The strengths and weaknesses of the techniques,including the chemical bath deposition(CBD),atomic layer deposition(ALD) and sputtering depositions,on industrial scale production were evaluated in a thought-provoking way.We suggest that the sputtering deposition be most feasible to large scale industrial production.The technical problems to be solved were also discussed.更多还原