【摘要】 采用简单的碳热还原法,以碳粉和SiO2微粉分别作为碳源和硅源,在1 550℃高温真空气氛箱式炉中制备SiC纳米线。并利用X射线衍射(XRD)、扫描电镜(SEM)和透射电镜(TEM)、傅里叶变换红外(FTIR)等测试手段对反应产物进行组分、形貌和结构表征。研究结果表明:产物为直线六棱柱形状的β-SiC纳米线,直径在50～300nm之间,纳米线内部含有较多的堆垛层错;纳米线主要以气—固(VS)机制生长。更多还原

【Abstract】 SiC nanowires are synthesized via the reaction between carbon powder and silicon dioxide powder by a simple carbon-thermal reduction in high-temperature vacuum furnace at 1550 ℃.X-ray diffraction(XRD),Scanning electron microscopy(SEM) and transmission electron microscopy(TEM),Fourier transform infrared spectrometer(FTIR) are employed to characterize the obtained product.The β-SiC nanowires experience a beeline hexagonal section and diameters in the range of 50~300 nm.A high stacking faults density exists in the nanowires.The growth mechanism of the nanowires is considered to involve a vapor-solid(VS) process.更多还原