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Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well

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【作者】 谷承艳刘贵鹏时凯宋亚峰李成明刘祥林杨少延朱勤生王占国

【Author】 Gu Cheng-Yan,Liu Gui-Peng,Shi Kai,Song Ya-Feng,Li Cheng-Ming,Liu Xiang-Lin,Yang Shao-Yan,Zhu Qin-Sheng,and Wang Zhan-Guo Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083,China

【机构】 Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences, P.O.Box 912

【摘要】 We theoretically study the influence of spacer layer thickness fluctuation(SLTF) on the mobility of a twodimensional electron gas(2DEG) in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.

【Abstract】 We theoretically study the influence of spacer layer thickness fluctuation(SLTF) on the mobility of a twodimensional electron gas(2DEG) in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.

【基金】 Project supported by the National Natural Science Foundation of China (Grant Nos. 60976008,61006004,61076001,and10979507);the National Basic Research Program of China (Grant No. A000091109-05);the National High Technology Research and Development Program of China (Grant No. 2011AA03A101)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2012年10期
  • 【分类号】TN386
  • 【下载频次】27
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