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Defect properties of CuCrO2:A density functional theory calculation

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【作者】 方志杰朱基珍周江莫曼

【Author】 Fang Zhi-Jie a)b),Zhu Ji-Zhen a),Zhou Jiang a),and Mo Man a) a) Department of Information and Computation of Science,Guangxi University of Technology,Liuzhou 545006,China b) State Key Laboratory for Superlattics and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083,China

【机构】 Department of Information and Computation of Science,Guangxi University of TechnologyState Key Laboratory for Superlattics and Microstructures,Institute of Semiconductors, Chinese Academy of Sciences

【摘要】 Using the first-principles methods,we study the formation energetics properties of intrinsic defects,and the charge doping properties of extrinsic defects in transparent conducting oxides CuCrO2.Intrinsic defects,some typical acceptortype,and donor-type extrinsic defects in their relevant charge state are considered.By systematically calculating the formation energies and transition energy,the results of calculation show that,V Cu,O i,and O Cu are the relevant intrinsic defects in CuCrO2 ;among these intrinsic defects,V Cu is the most efficient acceptor in CuCrO2.It is found that all the donor-type extrinsic defects have difficulty in inducing n-conductivity in CuCrO2 because of their deep transition energy level.For all the acceptor-type extrinsic defects,substituting Mg for Cr is the most prominent doping acceptor with relative shallow transition energy levels in CuCrO2.Our calculation results are expected to be a guide for preparing promising n-type and p-type materials in CuCrO2.

【Abstract】 Using the first-principles methods,we study the formation energetics properties of intrinsic defects,and the charge doping properties of extrinsic defects in transparent conducting oxides CuCrO2.Intrinsic defects,some typical acceptortype,and donor-type extrinsic defects in their relevant charge state are considered.By systematically calculating the formation energies and transition energy,the results of calculation show that,V Cu,O i,and O Cu are the relevant intrinsic defects in CuCrO2 ;among these intrinsic defects,V Cu is the most efficient acceptor in CuCrO2.It is found that all the donor-type extrinsic defects have difficulty in inducing n-conductivity in CuCrO2 because of their deep transition energy level.For all the acceptor-type extrinsic defects,substituting Mg for Cr is the most prominent doping acceptor with relative shallow transition energy levels in CuCrO2.Our calculation results are expected to be a guide for preparing promising n-type and p-type materials in CuCrO2.

【关键词】 first-principledefectsformation energy
【Key words】 first-principledefectsformation energy
【基金】 Project supported by the National Natural Science Foundation of China (Grant No. 11147195);the Science Fund from the Guangxi Experiment Centre of Science and Technology (Grant No. LGZXKF201204);the Science Plan Projects of the Education Department of Guangxi Zhuang Autonomous Region (Grant No. 200103YB102)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2012年08期
  • 【分类号】O469
  • 【被引频次】4
  • 【下载频次】50
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